Design and Simulation Study of Active Baluns Circuits for WiMAX Applications

Frederick Ray I. Gomez, John Richard E. Hizon, Maria Theresa G. De Leon

Abstract


The paper presents a design and simulation study of three active balun circuits implemented in a standard 90nm Complementary Metal-Oxide Semiconductor (CMOS) process namely: (1) common-source/drain active balun; (2) common-gate with common-source active balun; and (3) differential active balun.  The active balun designs are intended for Worldwide Interoperability for Microwave Access (WiMAX) applications operating at frequency 5.8GHz and with supply voltage of 1V.  Measurements are taken for parameters such as gain difference, phase difference, and noise figure.  All designs achieved gain difference of less than 0.23dB, phase difference of 180° ± 7.1°, and noise figure of 7.2–9.85dB, which are comparable to previous designs and researches.  Low power consumption attained at the most 4.45mW.

Keywords


Active balun; WiMAX; gain difference; phase difference

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References


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DOI: https://doi.org/10.24203/ajet.v7i1.5678

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