Optical and Defect Properties in Nearly Stochiometry ZnO Film Coated on Si (111) by Ultrasonic Spray Pyrolysis Method
DOI:
https://doi.org/10.24203/ajas.v8i4.6291Keywords:
Keywords— ZnO film, Ultrasonic Spray Pyrolysis , Defect, opticalAbstract
ZnO is one of ceramic semiconductor material, which has interesting properties due its wide bandgap energy (3.4 eV), and it may be used in many optoelectronic devices. Optical and Defects properties of ZnO could affect the properties of the devices. ZnO films have been deposited on Si (111) substrate by ultrasonic spray pyrolysis (U.S.P.) method at temperatures 400oC, 450oC, and 500oC. The samples consist of two part, annealed and non-annealed heat treatment. The annealed treatment was conducted at temperature 800oC for 2 hours. The XRD pattern revealed that the ZnO film is a polycrystalline. The T.E.M. characterization showed that non stochiometry of the ZnO film present. From the UV-vis pattern, the transition of electrons is affected by the defect present. The ZnO films show a characteristic luminescence properties. It found three defects, there are oxygen vacancies (Vo), oxygen interstitial (Oi), and an electron transition from the level of the ionized oxygen vacancies to the valence band, that is responsible for green band emission.
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